= 10 v = 10 v power mo sfet 1.ga te 3.source 2.drai n ? ordering information 7N60 7n65 1 of 7 z ibo seno electronic engineering co., ltd. www.senocn.com 7N60 7n65 1 to-220 1 7.0 amps, 600/650 volts n-channel power mosfet ? descripti on 7n65 is a high vol t age mosfet and is desi gned to have better c haracteristics, such as fast s w itching time, low gate charg e , low o n-state resistance and have a high rugged avalanche cha r ac te ristics. this power mosfet is usually used at high speed s w itch in g applications in switching power supplies and adaptors. ? features * r ds (on) = 1 .0 ? @ v gs r ds (on) = 1 .2 ? @ v gs * ultra lo w gate charg e (typical 29 nc ) * lo w rev e rse transfer capacitance ( c r ss = t y pica l 16pf ) * fa st sw itchi ng capability * avala nche en e rgy tested * improved dv/dt capabilit y, hi gh ruggedness ? sy mbol 1 1 to-262/i pak 2 to-263/d pak 2 7N60 ito-220/to-220f to-263/d pak to-262/i pak 7N60 pin assig n men t ordering n um ber package 1 2 3 t o -220 g d s ito-220/to-220f g d s g d s g d s note: pin assignment: g: ga te d: drain s: source 7n65 2 2 1 1 to-251/ipak to-252/dpak par t no. package packing 7n6* -tu to- 251 75pcs / tube 7n6* -tr to- 252 2.5kpcs / 13 reel 7n6* -tu to- 220 50pcs / tube 7n6* -tu ito -220 50pcs / tube 7n6* -tu to- 252 75p cs / tube 7n6* -tu to-262 50p cs / tube 7n6* -tu to-263 50p cs / tube 7n6* -tr to-263 800pcs / 13" reel g d s g d s to-251/ipak to-252/dpak a l l d a t a s h e e t
a power m o sfet 7N60 7n65 2 of 7 z ibo seno electronic engineering co., ltd. www.senocn.com 7N60 7n65 142 48 w ? absolute maximu m ra tings ( t c = 25 , unless otherw i se specified) parameter symbol ratings unit drain-source voltag e v dss 650 v gate-source vo ltag e v gss 30 v avalanche c u rrent (note 2) i ar 7.0 a continuo us i d 7.0 a drain cu rrent pulsed (note 2 ) i dm single puls ed ( note 3) e as 530 aval an che energy repetitive (not e 2) e ar peak diode r e covery dv/dt (note 4) dv/dt 4.5 v/ns to -220 142 w pow e r dissipation p d ( t c = 25 ) junction t emperature t j +150 ambient opera t ing temperature t opr -55 ~ + 150 storage temperature t st g -55 ~ +150 notes: 1. absol ute maximum ratings are those values be yo nd which the device could be permanently damaged. absolute ma ximum ratings are stress ratings only and functional device oper ation is not im plied. 2. repetitiv e rating : pulse width limited by t j 3. l= 64mh, i as =7.0a, v dd =50v, r g =25 ? , starting t j = 25c 4. i sd 7.0a, di/dt 200a/ s, v dd bv ds s , starting t j = 25c ? ther mal data 7N60 7n65 600 v to -220f to-262/i pak 2 to-263/d pak 2 29.6 mj 14.2 mj w 142 w parameter symbol rat i ng unit junction to ambient to-220/ito-220/to-220f to-262/to-263 ja 62.5 c/w to-251/ to-252 160 junction to case to-220/to-262/to-263 jc 1.25 c/w ito-220/to-220f 3.5 to-251/ to-252 2.5 a l l d a t a s h e e t
power m o sfet 7N60 7n65 3 of 7 z ibo seno electronic engineering co., ltd. www.senocn.com 7N60 7n65 ? electrical characteris tic s (t j = 25 , unless oth e r wis e specifi ed) parameter symbol test conditions min t yp max unit off charac teristics 7N60 v drain-source breakdown voltage 7n65 bv dss v gs = 0v, i d = 250 a 650 v drain-source leakage curr en t i dss v ds = 600v, v gs = 0v 1 a forward v gs = 30v, v ds = 0v 100 na gate-source leakage current reverse i gss v gs = -30v, v ds = 0v -100 na breakdown vo l tage temperature coefficient bv dss /t j i d = 250 a, referenc ed to 25c 0.67 v/ on charac t eristics gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v static drain-source on-state resistance r ds(on) v gs = 10v, i d =3.51a 1.2 ? dynamic ch a racteristics input cap a cita nce c iss 1400 pf output capacitance c oss 180 pf reverse transfer capacitance c rss v ds =25v, v gs =0v,f =1mhz 16 21 pf switching c h a r a c teris t ics turn-on delay t i me t d (on) 70 ns t u rn-on rise t i me t r 170 ns turn-off delay t i me t d(off) 140 ns turn-off fall ti me t f v dd =300v, i d =7.0a, r g =2 5 ? (note 1, 2) ns total gate charge q g 29 38 nc gate-source charge q gs 7 nc gate-drain charge q gd v ds =480v, v gs =10v, i d =7.0a (note 1, 2) 14.5 nc drain-source diode cha r acteristics drain-s ource diod e f o r w ard voltage v sd v gs = 0 v , i sd = 7.0 a 1.4 v continuous drain-source c u rrent i sd 7.0 a pulse d drai n-s ource c u rrent i sm 29.6 a reverse recovery time t rr 320 ns reverse recovery charge q rr v gs = 0 v, i sd = 7.0a, di/dt = 100 a/ s (note1) 2.4 c notes: 1. pulse test: pulse w idth 300 s, duty cycle 2% 2. essentia ll y in d epe nde nt of op eratin g temper ature 600 130 a l l d a t a s h e e t
power m o sfet ? test circ uits and waveform s same type as d.u.t. l v dd drive r v gs r g - v ds d.u.t. + * d v/d t co ntroll ed by r g * i sd co ntr olle d by pulse period * d.u.t.-de v ice under test p. w. period d= v gs ( d river) i sd (d .u .t.) i fm , bo dy dio de forwar d cu rrent di/dt i rm bod y diode reve rse cu rrent body diod e recovery dv/dt body diode f orward voltage drop v dd 10 v v ds (d.u.t. ) - + v gs = p.w. period f i g. 1 a peak diode recovery dv/dt test circuit f i g. 1 b peak diode recovery dv/dt waveforms 7N60 7n65 4 of 7 z ibo seno electronic engineering co., ltd. www.senocn.com 7N60 7n65 a l l d a t a s h e e t
power m o sfet ? test circ uits and waveform s (cont.) fig. 2a sw itching test circuit fig. 2b s w itching waveforms f ig. 3 a gate charge test circuit fig. 3b gate charge waveform d.u. t. r d 10 v v ds l v dd t p v dd t p time bv dss i as i d(t ) v ds (t) fig. 4a uncl a mped inductive switching test circuit fig. 4b unc l amped inductive switching waveforms 7N60 7n65 5 of 7 z ibo seno electronic engineering co., ltd. www.senocn.com 7N60 7n65 a l l d a t a s h e e t
power m o sfet 7N60 7n65 6 of 7 z ibo seno electronic engineering co., ltd. www.senocn.com 7N60 7n65 ? typical chara ct eristics 10 1 10 0.1 1 drain-to-sou rce voltage, v ds (v ) on-state characteristics 0.1 2 gate-sou rce voltage, v gs (v) transfer chara c teristics 46 810 10 1 0.1 v gs top: 15.0v 10.0v 8.0v 7.0v 6.5v 6.0v bottorm:5.5v notes: 1. 2 50 s pulse test 2. t c =25c notes: 1. v ds =50v 2. 250 s p ulse test 0 0 drain-s o urce on-resistance, r ds(on) ( ) drain current, i d (a) 24 1 2 4 5 6 on -resista nc e variation vs. drain current and gate voltage 3 6 8 10 12 1 0. 1 source-d ra in voltage, v sd (v) reverse drain current , i dr (a) on sta t e current vs. allowable case temperature 0.6 10 note: t j =25c notes: 1. v gs =0v 2. 250 s t est v gs =20v v gs =10v 0.2 0.4 0.8 1 .0 1.2 1.4 1.6 a l l d a t a s h e e t
power m o sfet 7N60 7n65 7 of 7 z ibo seno electronic engineering co., ltd. www.senocn.com 7N60 7n65 ? typical chara ct eristics(cont.) drain-source breakdown voltage, bv dss (normalized) drain-source on-resistance, r ds(on) (normalized) square wave pulse duratio n, t 1 (sec) transient thermal response curve case temperature, t c ( c ) 75 100 0 125 5025 2.5 3.75 5.0 6.25 7.5 maximum drain current vs. c ase temperature 1.25 150 1 0.1 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 notes: 1. jc (t) = 1.18 c /w max. 2. duty fact or, d=t1/t2 3. t jm -t c =p dm jc (t) d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse 10 0 10 -1 10 -2 drain-source voltage, v ds (v) 10 2 10 1 10 0 10 3 safe operating area C 600v notes: 1. t j =25 c 2. t j =150 c 3. single p ulse dc 10ms 1ms 100s operation i n this area is limited by r ds(on) 10 1 600 a l l d a t a s h e e t
|
